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| Semiconductor STS9018 NPN Silicon Transistor Description * High frequency low noise amplifier application * VHF band amplifier application Features * Low noise figure : NF = 4dB(Max.) at f=100MHz * High transition frequency fT = 800MHz(Typ.) Ordering Information Type NO. STS9018 Marking STS9018 Package Code TO-92 Outline Dimensions 3.450.1 4.50.1 2.250.1 unit : mm 4.50.1 0.40.02 14.00.40 2.060.1 1.27 Typ. 2.54 Typ. 123 1.200.1 PIN Connections 1. Emitter 2. Base 3. Collector 0.38 KST-9019-000 1 STS9018 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature range Ta=25C Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 40 30 4 20 -20 625 150 -55~150 Unit V V V mA mA mW C C Electrical Characteristics Characteristic Collector cut-off current Emitter cut-off current DC current gain Transistor frequency Noise figure Power gain Ta=25C Symbol ICBO IEBO hFE* fT NF GPE Test Condition VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=10V, IE=-8mA VCB=6V,IE=-1mA, f=100MHz Min. Typ. Max. 54 500 15 800 0.1 0.1 198 4 - Unit A A MHz dB * : hFE rank / F : 54~80, G : 70~108, H : 97~146, I : 132~198. KST-9019-000 2 STS9018 Electrical Characteristic Curves Fig. 1 PC -Ta Fig. 2 IC-VCE Fig. 3 hFE-IC Fig. 4 fT-IE Fig. 5 Cob-VCB, Cib-VEB Fig. 6 Yie-IC KST-9019-000 3 STS9018 Electrical Characteristic Curves Fig. 7 IC-Yoe Fig. 8 IC-Yfe Fig. 9 IC - Yre KST-9019-000 4 |
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